FDG332PZ 20v, 2.6a, 97m ? features ? max r ds(on) = 95m ? at v gs = -4.5v, i d = -2.6a ? max r ds(on) = 115m ? at v gs = -2.5v, i d = -2.2a ? max r ds(on) = 160m ? at v gs = -1.8v, i d = -1.9a ? max r ds(on) = 3 3 0m ? at v gs = -1.5v, i d = -1.0a ? very low level gate drive requirements allowing operation in 1.5v circuits ? very small package outline sc70-6 ? rohs compliant applications ? battery management ? load switch mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -20 v v gs gate to source voltage 8 v i d drain current -continuous -2.6 a -pulsed -9 p d power dissipation (note 1a) 0.75 w power dissipation (note 1b) 0.48 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient single operation (note 1a) 170 c/w r ja thermal resistance, junction to ambient single operation (note 1b) 260 device marking device package reel size tape width quantity .32 FDG332PZ sc70-6 7?? 8 mm 3000 units d d g d d s d s d d g d pin 1 sc70-6 smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = -250 a, v gs = 0v -20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -13 mv/ c i dss zero gate voltage drain current v ds = -16v, v gs = 0v -1 a i gss gate to source leakage current v gs = 8v, v ds = 0v 10 a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -0.4 -0.7 -1.5 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 2.5 mv/ c r ds(on) static drain to source on resistance v gs = -4.5v, i d = -2.6a 73 95 m ? v gs = -2.5v, i d = -2.2a 90 115 v gs = -1.8v, i d = -1.9a 117 160 v gs = -1.5v, i d = -1.0a 147 3 3 0 v gs = -4.5v, i d = -2.6a , t j = 125c 100 133 g fs forward transconductance v dd = -5v, i d = -2.6a 9 s dynamic characteristics c iss input capacitance v ds = -10v, v gs = 0v, f = 1mhz 420 560 pf c oss output capacitance 85 115 pf c rss reverse transfer capacitance 75 115 pf switching characteristics t d(on) turn-on delay time v dd = -10v, i d = -2.6a, v gs = -4.5v, r gen = 6 ? 5.2 10 ns t r rise time 4.8 10 ns t d(off) turn-off delay time 59 95 ns t f fall time 28 45 ns q g total gate charge v gs = -4.5v, v dd = -10v, i d = -2.6a 7.6 10.8 nc q gs gate to source charge 0.9 nc q gd gate to drain ?miller? charge 1.9 nc drain-source diod e characteristics i s maximum continuous drain-source diode forward current -0.6 a v sd source to drain diode forward voltage v gs = 0v, i s = -0.6a (note 2) -0.7 -1.2 v t rr reverse recovery time i f = 2.6a, di/dt = 100a/ s 28 45 ns q rr reverse recovery charge 8 13 nc and maximum ratings notes: 1. r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 s, duty cycle < 2.0%. a. 170c/w when mounted on a 1 in 2 pad of 2 oz copper . b. 260c/w when mounted on a minimum pad of 2 oz copper. FDG332PZ product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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